Ossila/Tantalum Disulfide Crystal | TaS2/Small/M2144A10

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*typical representative size, areas/dimensions may vary

General Information

Product Details

General Description

Tantalum disulfide (TaS₂) crystals have stacked layers, in which sheets of transition metal atoms lie between the chalcogen atom sheets in an S-Ta-S sequence. In each sheet, atoms are closely packed in a hexagonal pattern. The chemical bonding within the layer is covalent, while individual layers are bound by van der Waals (vdWs). This makes intercalation between layers possible and allows layers to be peeled off by exfoliation.

Layered TaS₂ exhibits a unique combination of valuable structural, mechanical, and electronic phases. 1T and 2H phases are the most representative structures. The distinction between two phases can be the S-Ta-S coordinated situations, which are recognised as octahedral coordination (1T) and prismatic coordination (2H).

Bulk 2H-TaS₂, exhibits a charge density wave (CDW) transition at 70K and a superconductivity transition at 0.8K [1].

Applications

2H-Tantalum disulfide has been used for the investigation of fundamental physical phenomena such as CDW associated with the dimensionality effect. Metallic 2H-TaS₂ has also been proven to be an efficient electrocatalyst for the hydrogen evolution reactions (HER), with a performance that is comparable to platinum, owing to its abundant active sites concentrated at edges and basal-planes, as well as the self-optimising morphological change of 2H-TaS₂.

Synthesis 

Tantalum disulfide is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.

Usage

Tantalum disulfide single crystals can be used to prepare mono- and few-layer TaS₂ by mechanical or liquid exfoliation.

Literature and Reviews

1. Enhanced superconductivity in atomically thin TaS2, E. Navarro-Moratalla et al., Nat. Commun., 7:11043 (2016); DOI: 10.1038/ncomms11043.
2. Enhanced superconductivity upon weakening of charge density wave transport in 2H-TaS2 in the two-dimensional limit, Y. Yang et al., Phys. Rev., 98, 035203 (2018); DOI: 10.1103/PhysRevB.98.035203.
3. Toward Exploring the Structure of Monolayer to Few-layer TaS2 by Efficient Ultrasound-free Exfoliation, Y. Hu et al., Nanoscale Res. Lett., 13:20 (2018); DOI 10.1186/s11671-018-2439-z.
4. Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2, D. Svetin et al., 7:46048 (2017); DOI: 10.1038/srep46048.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.